Datasheet > MMBTA92Q

MMBTA92Q

更新时间： 2024-09-27 13:45:39

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
2页	53K
描述
PNP, 300V, 0.5A, SOT23

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中文翻译

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MMBTA92Q 数据手册

MMBTA92

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

SOT-23

Epitaxial Planar Die Construction

Complementary NPN Type Available

(MMBTA42)

Ideal for Medium Power Amplification and

Switching

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Case material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking (See Page 2): K3R

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic Symbol

MMBTA92

-300

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

-300

Emitter-Base Voltage

-5.0

Collector Current (Note 1) (Note 3)

Power Dissipation (Note 1)

-500

°C/W

°C

P_d

300

R_qJA

T_j, T_STG

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

417

-55 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Symbol

Min

Max

Unit

Test Condition

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= -100mA, I_E= 0

I_C= -1.0mA, I_B= 0

-300

-5.0

I_E= -100mA, I_C= 0

V_CB= -200V, I_E= 0

V_CE= -3.0V, I_C= 0

-250

-100

I_EBO

Collector Cutoff Current

ON CHARACTERISTICS (Note 2)

I_C= -1.0mA, V_CE= -10V

I_C= -10mA, V_CE= -10V

I_C= -30mA, V_CE= -10V

h_FE

DC Current Gain

I_C= -20mA, I_B= -2.0mA

V_CE(SAT)

V_BE(SAT)

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

-0.5

-0.9

V_CB= -20V, f = 1.0MHz, I_E= 0

C_cb

f_T

6.0

V_CE= -20V, I_C= -10mA,

f = 100MHz

Current Gain-Bandwidth Product

MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance

rating (R_qJA), power dissipation rating (P_d) and power derating curve (figure 1).

DS30060 Rev. 5 - 2

1 of 2

MMBTA92

www.diodes.com

中文翻译

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与MMBTA92Q相关器件

型号	品牌	获取价格	描述	数据表
MMBTA92-Q	NEXPERIA	获取价格	PNP high-voltage transistorProduction
MMBTA92Q-7-F	DIODES	获取价格	300V PNP SMALL SIGNAL TRANSISTOR IN SOT23
MMBTA92S3	RECTRON	获取价格	Package / Case : SOT-323;Mounting Style : SMD/SMT;Power Rating : 0.2W;Transistor Polarity
MMBTA92S62Z	TI	获取价格	100mA, 300V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA92T	FOSHAN	获取价格	SOT-89
MMBTA92-TP	MCC	获取价格	PNP Silicon High Voltage Transistor
MMBTA92-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, HALOGE
MMBTA92W	SEMTECH	获取价格	PNP Silicon Epitaxial Planar Transistor
MMBTA92W	SECOS	获取价格	General Purpose Transistor
MMBTA92W	PANJIT	获取价格	SOT-323

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