Datasheet > MMBTA92S3

MMBTA92S3

更新时间： 2024-09-26 18:09:39

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	638K
描述
Package / Case : SOT-323;Mounting Style : SMD/SMT;Power Rating : 0.2W;Transistor Polarity : PNP;VCEO : 300 V;VCBO : 300 V;VEBO : 5 V;Max Collector Current : 0.5 A;DC Current Gain hFE Max : 250

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MMBTA92S3 数据手册

MMBTA92S3

Silicon PNP SMD triode

FEATURES

SOT-323

1、Small Surface Mount Package

2、Complementary to MMSTA42

MARKING:K3R

1：Base 2：Emitter 3：Collector

Maximum ratings(Ta=25℃ unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

Value

-300

-5

Symbol

VCBO

VCEO

VEBO

Unit

-200

/200

℃

Collector Power Dissipation

Junction Temperature

150

Storage Temperature

-55~150

Tstg

℃

Electrical Characteristics (Ta=25℃ unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector Emitter Voltage

Test Condition

IC=-100uA IE=0

Symbol

VCBO

Min

-300

-5

Max

Unit

IC=-1mA IB=0

VCEO

Emitter-Base Breakdown Voltage

Collector Cutoff Current

IE=-100uA IC=0

VEBO

VCB=-200V IE=0

VCE=-5V IB=0

ICBO

-250

-100

Emitter Cutoff Current

IEBO

VCE=-10V IC=-1mA

VCE=-10V IC=-10mA

VCE=-10V IC=-30mA

IC=-20mA IB=-2mA

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE(sat)

DC Current Gain

300

Collector-Emitter Saturation Voltage

Collector-Base Saturation Voltage

-0.5

-0.9

VCE=-20V IC=-10mA

f=30MHz

Transition frequency

MHz

2022-12/17

REV:O

12 3 4

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