Datasheet > MMBTA92-Q

MMBTA92-Q

更新时间： 2024-11-21 17:01:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	177K
描述
PNP high-voltage transistorProduction

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中文翻译

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MMBTA92-Q 数据手册

MMBTA92-Q

PNP high-voltage transistor

7 July 2023

Product data sheet

1. General description

PNP high-voltage transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.

NPN complement: MMBTA42-Q

2. Features and benefits

•

Low current (max. 100 mA)

•

High voltage (max. 300 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Telephony

Professional communication equipment

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-300

I_C

collector current

DC current gain

-100

h_FE

V_CE= -10 V; I_C= -1 mA; pulsed; t_p≤

300 µs; δ ≤ 0.02; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

collector

sym013

SOT23

12 3 4 5 6 7

中文翻译

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