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MMBTA92LT1 PDF预览

MMBTA92LT1

更新时间: 2024-11-18 12:36:43
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管光电二极管
页数 文件大小 规格书
2页 164K
描述
PNP EPITAXIAL SILICON TRANSISTOR

MMBTA92LT1 数据手册

 浏览型号MMBTA92LT1的Datasheet PDF文件第2页 
RoHS  
M M B T A 9 2 L T 1  
PNP EPITAXIAL SILICON TRANSISTOR  
SOT-23  
3
HIGH VOLTGE TRANDIDTOR  
1
Complement to MMBTA42LT1  
High Collector-Emitter Voltage:Vcbo=-300V  
2
Collector current:Ic=-500mA  
Collector Dissipation:Pc=225mW(Ta=25oC)  
1.  
1.BASE  
2.EMITTER  
2.4  
1.3  
3.COLLECTOR  
Unit:mm  
(Ta=25oC)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Rating  
Unit  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
V
V
V
CBO  
CEO  
EBO  
V
V
-300  
-300  
-5  
V
Emitter-Base Voltage  
Collector Current  
Collector Dissipation Ta=25oC*  
Junction Temperature  
Storage Temperature  
mA  
Ic  
-500  
225  
P
T
T
D
mW  
O C  
O C  
j
150  
stg  
-55~150  
(Ta=25oC)  
Electrical Characteristics  
Characteristic  
Symbol MIN. TYP.MAX. Unit  
Condition  
V
-300  
-300  
-5  
BVCBO  
BVCEO  
BVEBO  
I
I
I
C
C
E
=-100 A I  
=-1mA I =0  
=-100 A I =0  
CB=-200V, V =0  
CB=-3V, I =0  
CE=-10V, I =-10mA  
E
=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage#  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
V
V
B
C
I
I
CBO  
-250 nA  
-100 nA  
250  
V
V
V
e
EBO  
Collector Cutoff Current  
C
40  
H
V
V
C
FE  
DC Current Gain  
C
CE(sat)  
BE(sat)  
ob  
-0.5  
-0.9  
6
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
C
=-20mA, I  
=-20mA, I  
B
=-2mA  
=-2mA  
C
B
Collector-Base Capacitance  
Current Gain-Bandwidth Product  
V
V
CB=-20V, I  
CE=-20V I  
E
=0 f=100MHz  
=-10mA  
PF  
f
T
C
100  
50  
MHz  
f=100MHz  
o
WEJ ELECTRONIC CO.,LTD  
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25 C  
#
<
<
Pulse Test: Pulse Width 300uS Duty cycle 2%  
DEVICE MARKING:  
MMBTA92LT1=2D  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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