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MMBTA56LT3G PDF预览

MMBTA56LT3G

更新时间: 2024-11-18 10:52:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管驱动
页数 文件大小 规格书
6页 72K
描述
Driver Transistors(PNP Silicon)

MMBTA56LT3G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.5
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):100
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

MMBTA56LT3G 数据手册

 浏览型号MMBTA56LT3G的Datasheet PDF文件第2页浏览型号MMBTA56LT3G的Datasheet PDF文件第3页浏览型号MMBTA56LT3G的Datasheet PDF文件第4页浏览型号MMBTA56LT3G的Datasheet PDF文件第5页浏览型号MMBTA56LT3G的Datasheet PDF文件第6页 
MMBTA55LT1,  
MMBTA56LT1  
MMBTA56LT1 is a Preferred Device  
Driver Transistors  
PNP Silicon  
http://onsemi.com  
Features  
Pb−Free Package is Available  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BASE  
MMBTA55  
MMBTA56  
−60  
−80  
2
CollectorBase Voltage  
EmitterBase Voltage  
Vdc  
EMITTER  
MMBTA55  
MMBTA56  
−60  
−80  
3
−4.0  
Vdc  
Collector Current − Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
−500  
mAdc  
C
1
2
SOT−23  
CASE 318  
STYLE 6  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
(Note 1) T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
MARKING DIAGRAMS  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
q
JA  
Total Device Dissipation Alumina  
P
D
300  
mW  
2H X  
2GM X  
Substrate, (Note 2) T = 25°C  
A
Derate above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
q
JA  
MMBTA55LT1  
MMBTA56LT1  
2H, 2GM = Specific Device Code  
= Date Code  
Junction and Storage Temperature  
T , T  
55 to  
+150  
°C  
J
stg  
X
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
SOT−23  
SOT−23  
SOT−23  
Shipping  
MMBTA55LT1  
MMBTA55LT3  
MMBTA56LT1  
3000/Tape & Reel  
10,000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
MMBTA56LT1G SOT−23  
(Pb−Free)  
MMBTA56LT3  
SOT−23  
10,000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
March, 2004 − Rev. 3  
MMBTA55LT1/D  
 

MMBTA56LT3G 替代型号

型号 品牌 替代类型 描述 数据表
SMMBTA56LT3G ONSEMI

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