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SMMBTA56LT1G PDF预览

SMMBTA56LT1G

更新时间: 2024-02-13 04:28:00
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管驱动放大器
页数 文件大小 规格书
5页 113K
描述
Driver Transistors

SMMBTA56LT1G 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:5 weeks风险等级:1.51
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
参考标准:AEC-Q101子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

SMMBTA56LT1G 数据手册

 浏览型号SMMBTA56LT1G的Datasheet PDF文件第2页浏览型号SMMBTA56LT1G的Datasheet PDF文件第3页浏览型号SMMBTA56LT1G的Datasheet PDF文件第4页浏览型号SMMBTA56LT1G的Datasheet PDF文件第5页 
MMBTA55LꢀSeries,  
MMBTA56LꢀSeries,  
SMMBTA56LꢀSeries  
Driver Transistors  
PNP Silicon  
http://onsemi.com  
Features  
AECQ101 Qualified and PPAP Capable  
S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant*  
SOT23  
CASE 318  
STYLE 6  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
CollectorEmitter Voltage  
MMBTA55  
MMBTA56, SMMBTA56  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BASE  
60  
80  
2
CollectorBase Voltage  
MMBTA55  
MMBTA56, SMMBTA56  
Vdc  
EMITTER  
60  
80  
MARKING DIAGRAM  
EmitterBase Voltage  
4.0  
Vdc  
Collector Current Continuous  
I
C
500  
mAdc  
2xx M G  
THERMAL CHARACTERISTICS  
Characteristic  
G
Symbol  
Max  
Unit  
1
Total Device Dissipation FR5 Board  
P
D
(Note 1) T = 25C  
225  
1.8  
mW  
mW/C  
2xx = Device Code  
A
Derate above 25C  
x = H for MMBTA55LT1G  
xx = GM for MMBTA56LT1G,  
SMMBTA56LT1G  
= Date Code*  
= PbFree Package  
Thermal Resistance, JunctiontoAmbient  
Total Device Dissipation Alumina  
R
556  
C/W  
q
JA  
P
M
G
D
Substrate, (Note 2) T = 25C  
300  
2.4  
mW  
mW/C  
A
Derate above 25C  
(Note: Microdot may be in either location)  
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
417  
C/W  
C  
q
JA  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
T , T  
J
55 to +150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 Rev. 7  
MMBTA55LT1/D  
 

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