Datasheet > MMBTA13_11

MMBTA13_11

更新时间： 2024-11-18 10:52:27

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管达林顿晶体管
页数	文件大小	规格书
5页	258K
描述
NPN Darlington Amplifier Transistor

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中文翻译

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数据手册

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MMBTA13_11 数据手册

M C C

MMBTA13

MMBTA14

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Operating And Storage Temperatures –55^OC to +150^OC

R_θJAis 556^OC/W (Mounted on FR-5 PCB 1.0” x0.75” x0.062” )

Capable of 225mWatts of Power Dissipation

Marking: MMBTA13 ---K2D; MMBTA14 ---K3D

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

NPN Darlington

Amplifier Transistor

SOT-23

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage*

Vdc

(I =100uAdc, I_B=0)

V_(BR)CBO

V_(BR)EBO

I_C

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current-Continuous

Vdc

300

mAdc

nAdc

I_CBO

Collector Cutoff Current

(V_CB=30Vdc, I_E=0)

Emitter Cutoff Current

100

I_EBO

nAdc

(V_EB=10Vdc, I =0)

ON CHARACTERISTICS

h_FE

DC Current Gain*

MMBTA13

MMBTA14

(I =10mAdc, V_CE=5.0Vdc)

5000

10000

DIMENSIONS

INCHES

MIN

MMBTA13

MMBTA14

V_CE(sat)

(I =150mAdc, V_CE=1.0Vdc)

10000

20000

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

Collector-Emitter Saturation Voltage

(I =100mAdc, I =0.1mAdc)

1.5

2.0

Vdc

V_BE(sat)

Base-Emitter Saturation Voltage

(I =100mAdc,V_CE=5.0Vdc)

.100

1.12

.180

.51

SMALL-SIGNAL CHARACTERISTICS

f_T

.085

.37

Current Gain-Bandwidth Product

(I =10mAdc, V_CE=5.0Vdc, f=100MHz)

125

MHz

Suggested Solder

Pad Layout

.031

.800

C_obo

Output Capacitance

(V_CB=10Vdc, I_E=0, f=1.0MHz)

8.0

ibo

Input Capacitance

(V_BE=0.5Vdc, I_C=0, f=1.0MHz)

.035

.900

inches

.079

2.000

SWITCHING CHARACTERISTICS

t_d

t_r

Delay Time

Rise Time

(V_CC=30Vdc, V_BE=0.5Vdc

I_C=150mAdc, I_B1=15mAdc)

225

t_s

Storage Time

(V_CC=30Vdc, I =150mAdc

.037

.950

t_f

Fall Time

I_B1=I_B2=15mAdc)

.037

.950

www.mccsemi.com

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Revision: A

2011/01/01

12 3 4 5

中文翻译

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与MMBTA13_11相关器件

型号	品牌	获取价格	描述	数据表
MMBTA13_15	SECOS	获取价格	Darlington Amplifier Transistor NPN Silicon
MMBTA13_15	UTC	获取价格	DARLINGTON TRANSISTOR
MMBTA13_2	DIODES	获取价格	NPN SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA13_NL	FAIRCHILD	获取价格	暂无描述
MMBTA13-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC
MMBTA13-3L	BL Galaxy Electrical	获取价格	30V,0.3A,General Purpose NPN Bipolar Transistor
MMBTA13-7	DIODES	获取价格	NPN SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA13-7-F	DIODES	获取价格	NPN SURFACE MOUNT DARLINGTON TRANSISTOR
MMBTA13D87Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
MMBTA13G-AE3-R	UTC	获取价格	DARLINGTON TRANSISTOR

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