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MMBTA13-3L PDF预览

MMBTA13-3L

更新时间: 2024-11-19 17:01:27
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
3页 176K
描述
30V,0.3A,General Purpose NPN Bipolar Transistor

MMBTA13-3L 数据手册

 浏览型号MMBTA13-3L的Datasheet PDF文件第2页浏览型号MMBTA13-3L的Datasheet PDF文件第3页 
Product specification  
NPN Darlington Amplifier Transistor  
MMBTA13-3L  
FEATURES  
Pb  
Lead-free  
Epitaxial planar die construction.  
Complementary PNP type available  
(MMBTA63-3L/MMBTA64-3L).  
High current gain.  
MSL 1  
APPLICATIONS  
Ideal for medium power amplification and switching.  
SOT-23-3L  
ORDERING INFORMATION  
Type No.  
Marking  
K2D  
Package Code  
MMBTA13-3L  
SOT-23-3L  
: none is for Lead Free package;  
“G” is for Halogen Free package.  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
UNIT  
VCBO  
collector-base voltage  
30  
V
VCEO  
collector-emitter voltage  
30  
V
VEBO  
IC  
emitter-base voltage  
10  
0.3  
V
A
collector current (DC)  
PC  
Collector dissipation  
0.3  
W
RθJA  
Tj ,Tstg  
Thermal Resistance, Junction to Ambient  
junction and storage temperature  
417  
°C/W  
°C  
-55 to +150  
STM0213A  
www.gmesemi.com  
1

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