MMBTA14

更新时间： 2024-11-17 22:54:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管光电二极管
页数	文件大小	规格书
3页	58K
描述
NPN Darlington Transistor

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替代型号

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MMBTA14 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

MPSA14

MMBTA14

PZTA14

TO-92

SOT-23

Mark: 1N

SOT-223

NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at collector currents to 1.0 A. Sourced from

Process 05.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

1.2

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA14

*MMBTA14

**PZTA14

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

350

2.8

1,000

8.0

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

125

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1997 Fairchild Semiconductor Corporation

A14, Rev B

12 3

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MMBTA14 替代型号

型号	品牌	替代类型	描述	数据表
KST06MTF	FAIRCHILD	类似代替	Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
BCV27	FAIRCHILD	类似代替	NPN Darlington Transistor

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