BCV27

更新时间： 2024-10-01 22:27:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管光电二极管
页数	文件大小	规格书
5页	55K
描述
NPN Darlington Transistor

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替代型号

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BCV27 数据手册

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BCV27

SOT-23

Mark: FF

NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at collector currents to 1.0 A. Sourced from

Process 05.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

°C

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BCV27

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

350

2.8

357

mW/°C

°C/W

R_θ

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

12 3 4 5

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BCV27 替代型号

型号	品牌	替代类型	描述	数据表
BCV27	ONSEMI	类似代替	NPN 达林顿晶体管
MMBTA14	FAIRCHILD	类似代替	NPN Darlington Transistor

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