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MMBTA13LT1 PDF预览

MMBTA13LT1

更新时间: 2024-02-22 18:54:37
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
8页 113K
描述
Darlington Amplifier Transistors(NPN Silicon)

MMBTA13LT1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:0.63
Samacsys Description:Darlington NPN 30V 300mA HFE:10K SOT23 ON Semi MMBTA13LT1G Dual NPN Darlington Transistor, 300 mA 30 V HFE:5000, 3-Pin SOT-23最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:30 V配置:DARLINGTON
最小直流电流增益 (hFE):10000JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz

MMBTA13LT1 数据手册

 浏览型号MMBTA13LT1的Datasheet PDF文件第2页浏览型号MMBTA13LT1的Datasheet PDF文件第3页浏览型号MMBTA13LT1的Datasheet PDF文件第4页浏览型号MMBTA13LT1的Datasheet PDF文件第5页浏览型号MMBTA13LT1的Datasheet PDF文件第6页浏览型号MMBTA13LT1的Datasheet PDF文件第7页 
ON Semiconductort  
MMBTA13LT1  
MMBTA14LT1  
Darlington Amplifier  
Transistors  
MMBTA14LT1 is a Preferred Device  
NPN Silicon  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
3
V
CES  
CBO  
EBO  
1
V
V
30  
Vdc  
2
Emitter–Base Voltage  
10  
Vdc  
Collector Current — Continuous  
THERMAL CHARACTERISTICS  
Characteristic  
I
300  
mAdc  
CASE 318–08, STYLE 6  
SOT–23 (TO–236AB)  
C
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR–5 Board  
P
225  
mW  
D
T
= 25°C  
A
COLLECTOR 3  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
R
BASE  
1
qJA  
P
D
(2)  
Alumina Substrate,  
T
A
= 25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
EMITTER 2  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
qJA  
T , T  
J stg  
–55 to +150  
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Collector–Emitter Breakdown Voltage  
V
30  
Vdc  
nAdc  
nAdc  
(BR)CES  
(I = 100 mAdc, V  
C BE  
= 0)  
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
100  
100  
CBO  
CB  
Emitter Cutoff Current  
(V = 10 Vdc, I = 0)  
E
I
EBO  
EB  
C
1. FR–5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 1  
MMBTA13LT1/D  

MMBTA13LT1 替代型号

型号 品牌 替代类型 描述 数据表
MMBTA13LT1G ONSEMI

完全替代

Darlington Amplifier Transistors
MMBTA13 ONSEMI

类似代替

NPN达林顿晶体管
MMBTA13-7-F DIODES

功能相似

NPN SURFACE MOUNT DARLINGTON TRANSISTOR

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