Datasheet > MMBTA14

MMBTA14

更新时间： 2024-09-26 04:39:27

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管光电二极管
页数	文件大小	规格书
3页	143K
描述
NPN General Purpose Transistor

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中文翻译

获取价格

数据手册
替代型号

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MMBTA14 数据手册

BL Galaxy Electrical

Production specification

NPN General Purpose Transistor

MMBTA13/MMBTA14

FEATURES

Lead-free

Epitaxial planar die construction.

Complementary PNP type available

(MMBTA63/MMBTA64).

High current gain.

APPLICATIONS

Ideal for medium power amplification and switching

SOT-23

ORDERING INFORMATION

Type No.

Marking

Package Code

MMBTA13

MMBTA14

K2D

K3D

SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

collector-base voltage

Value

UNIT

MMBTA13

MMBTA14

MMBTA13

MMBTA14

V_CBO

collector-emitter voltage

V_CEO

V_EBO

I_C

emitter-base voltage

collector current (DC)

Collector dissipation

0.3

P_C

0.35

R_θJA

T_j,T_stg

Thermal Resistance, Junction to Ambient

junction and storage temperature

357

°C/W

°C

-55-150

Document number: BL/SSSTC121

Rev.A

www.galaxycn.com

12 3

中文翻译

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MMBTA14 替代型号

型号	品牌	替代类型	描述	数据表
PDTA123YK	NXP	功能相似	PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 10 kW
PDTC144VS	NXP	功能相似	NPN resistor-equipped transistors; R1 = 47 kΩ
PDTA123EK	NXP	功能相似	PNP resistor-equipped transistors

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