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MMBTA13-TP PDF预览

MMBTA13-TP

更新时间: 2024-11-18 10:52:27
品牌 Logo 应用领域
美微科 - MCC 晶体放大器晶体管达林顿晶体管
页数 文件大小 规格书
5页 150K
描述
NPN Darlington Amplifier Transistor

MMBTA13-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, PLASTIC, PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.68
最大集电极电流 (IC):0.3 A集电极-发射极最大电压:30 V
配置:DARLINGTON最小直流电流增益 (hFE):10000
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):125 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

MMBTA13-TP 数据手册

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MMBTA13  
MMBTA14  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Operating And Storage Temperatures –55OC to +150OC  
NPN Darlington  
Amplifier Transistor  
RθJA is 556OC/W (Mounted on FR-5 PCB 1.0” x0.75” x0.062” )  
Capable of 225mWatts of Power Dissipation  
Marking : MMBTA13 ----K2D; MMBTA14 ---- K3D  
Case Material:Molded Plastic. UL Flammability  
Classificatio Rating 94-0 and MSL Rating 1  
SOT-23  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
A
D
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage*  
30  
Vdc  
B
C
(I =100uAdc, IB=0)  
C
E
B
V(BR)CBO  
V(BR)EBO  
IC  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current-Continuous  
30  
10  
Vdc  
Vdc  
F
E
300  
mAdc  
nAdc  
G
H
J
ICBO  
Collector Cutoff Current  
(VCB=30Vdc, IE=0)  
Emitter Cutoff Current  
100  
100  
K
IEBO  
nAdc  
(VEB=10Vdc, I =0)  
C
ON CHARACTERISTICS  
hFE  
DC Current Gain*  
MMBTA13  
MMBTA14  
(I =10mAdc, VCE=5.0Vdc)  
5000  
10000  
C
DIMENSIONS  
MM  
INCHES  
MIN  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
MMBTA13  
MMBTA14  
VCE(sat)  
(I =150mAdc, VCE=1.0Vdc)  
C
10000  
20000  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
NOTE  
Collector-Emitter Saturation Voltage  
(I =100mAdc, I =0.1mAdc)  
1.5  
2.0  
Vdc  
Vdc  
C
B
VBE(sat)  
Base-Emitter Saturation Voltage  
(I =100mAdc,VCE=5.0Vdc)  
C
F
G
H
J
.100  
1.12  
.180  
.51  
SMALL-SIGNAL CHARACTERISTICS  
fT  
.003  
.015  
.085  
.37  
Current Gain-Bandwidth Product  
K
(I =10mAdc, VCE=5.0Vdc, f=100MHz)  
125  
MHz  
pF  
C
Suggested Solder  
Pad Layout  
.031  
.800  
Cobo  
Output Capacitance  
(VCB=10Vdc, IE=0, f=1.0MHz)  
8.0  
15  
C
ibo  
Input Capacitance  
(VBE=0.5Vdc, IC=0, f=1.0MHz)  
.035  
.900  
pF  
SWITCHING CHARACTERISTICS  
.079  
inches  
mm  
2.000  
td  
tr  
Delay Time  
Rise Time  
(VCC=30Vdc, VBE=0.5Vdc  
IC=150mAdc, IB1=15mAdc)  
10  
25  
225  
ns  
ns  
ns  
ts  
Storage Time  
(VCC=30Vdc, I =150mAdc  
C
tf  
Fall Time  
IB1=IB2=15mAdc)  
60  
ns  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 5  
Revision: 4  
2008/01/01  

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