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MMBTA14 PDF预览

MMBTA14

更新时间: 2024-11-17 22:54:39
品牌 Logo 应用领域
KEC 晶体晶体管达林顿晶体管光电二极管局域网
页数 文件大小 规格书
2页 69K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, DARLINGTON TRANSISTOR)

MMBTA14 数据手册

 浏览型号MMBTA14的Datasheet PDF文件第2页 
SEMICONDUCTOR  
MMBTA13/14  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
DARLINGTON TRANSISTOR.  
E
L
B
L
DIM MILLIMETERS  
_
+
2.93 0.20  
A
B
C
D
E
G
H
J
1.30+0.20/-0.15  
1.30 MAX  
0.45+0.15/-0.05  
2.40+0.30/-0.20  
1.90  
2
3
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
1
SYMBOL RATING  
UNIT  
V
0.95  
0.13+0.10/-0.05  
0.00 ~ 0.10  
0.55  
VCBO  
VCES  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
30  
K
L
P
P
V
M
N
P
0.20 MIN  
1.00+0.20/-0.10  
7
10  
V
Collertor Current  
500  
mA  
mW  
M
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
350  
1. EMITTER  
2. BASE  
150  
Tstg  
3. COLLECTOR  
Storage Temperature Range  
-55150  
* : Package Mounted On 99.5% Alumina 1080.6mm.  
SOT-23  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VCES  
TEST CONDITION  
IC=0.1mA  
MIN.  
TYP.  
MAX.  
UNIT  
Collector-Emitter Breakdown Voltage  
Emitter Cut-off Current  
Emitter Cut-off Current  
MMBTA13  
30  
-
-
-
-
-
V
ICBO  
VCB=30V  
VEB=10V  
100  
100  
nA  
nA  
IEBO  
-
5,000  
10,000  
10,000  
20,000  
-
-
-
-
-
-
-
-
-
IC=10mA, VCE=5V  
IC=100mA, VCE=5V  
MMBTA14  
hFE  
*
DC Current Gain  
-
MMBTA13  
-
MMBTA14  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
-
VCE(sat)  
VBE  
fT  
IC=100mA, IB=0.1mA  
1.5  
2.0  
V
V
IC=100mA, VCE=5V  
-
IC=10mA, f=100MHz, VCE=5V  
Current Gain Bandwith Product  
125  
-
-
MHz  
*Pulse Test : Pulse Width300S, Duty Cycle2.0%  
MARK SPEC  
Marking  
Lot No.  
TYPE  
MMBTA13  
AIX  
MMBTA14  
AHX  
Type Name  
MARK  
A X  
1999. 11. 30  
Revision No : 4  
1/2  

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