Datasheet > MMBTA14

MMBTA14

更新时间： 2024-11-10 14:54:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1165K
描述
SOT-23

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中文翻译

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数据手册

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MMBTA14 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

MMBTA14

TRANSISTOR (NPN)

Unit : mm

FEATURES

1. BASE

Darlington Amplifier

2. EMITTER

3. COLLECTOR

K3D = Device code

Solid dot = Green molding

compound device.

K 3 D

Marking : K3D

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

0.3

P_C

Collector Power Dissipation

300

R_θJA

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

417

℃/W

T_J,T_stg

-55~+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C= 100μA,I_E=0

I_C= 100μA, I_B=0

I_E= 100μA, I_C=0

V_CB=30 V, I_E=0

V_EB= 10V ,I_C=0

I_CBO

0.1

μA

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE=5V, I_C= 10mA

10000

20000

DC current gain

V_CE=5V, I_C= 100mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_{CE (sat)}

I_C=100mA, I_B=0.1mA

1.5

V_{BE (sat)}

Base-emitter voltage

Transition frequency

V_BE

f_T

V_CE=5V,I_C= 100mA

2.0

V_CE=5V, I_C= 10mA

f=100MHz

125

MHz

Collector output capacitance

C_ob

V_CB=10V,I_E=0,f=1MHz

* Pulse Test : pulse width≤300μs,duty cycle≤2%.

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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