Datasheet > MMBTA13D87Z

MMBTA13D87Z

更新时间： 2024-11-21 20:02:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		光电二极管
页数	文件大小	规格书
13页	843K
描述
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

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技术参数
数据手册

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MMBTA13D87Z 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PDSO-G3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.14
Base Number Matches：	1

MMBTA13D87Z 数据手册

MPSA13

MMBTA13

PZTA13

TO-92

SOT-23

Mark: 1M

SOT-223

NPN Darlington Transistor

This device is designed for applications requiring extremely

high current gain at collector currents to 1.0 A. Sourced from

Process 05. See MPSA14 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

1.2

Operating and Storage Junction Temperature Range

-55 to +150

°C

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA13

*MMBTA13

**PZTA13

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

625

5.0

83.3

350

2.8

1,000

8.0

mW/°C

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction to Ambient

200

357

125

°C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

ã 1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...13

中文翻译

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