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MMBTA13_NL PDF预览

MMBTA13_NL

更新时间: 2024-01-14 18:55:54
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管达林顿晶体管光电二极管
页数 文件大小 规格书
13页 606K
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MMBTA13_NL 数据手册

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MPSA13  
MMBTA13  
PZTA13  
C
C
E
E
C
B
TO-92  
C
B
SOT-23  
Mark: 1M  
B
SOT-223  
E
NPN Darlington Transistor  
This device is designed for applications requiring extremely  
high current gain at collector currents to 1.0 A. Sourced from  
Process 05. See MPSA14 for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCES  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
30  
V
V
30  
10  
V
Collector Current - Continuous  
1.2  
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPSA13  
*MMBTA13  
**PZTA13  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
1,000  
8.0  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
125  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
ã 1997 Fairchild Semiconductor Corporation  

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