Datasheet > MMBTA13_15

MMBTA13_15

更新时间： 2024-02-05 07:31:59

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SECOS		/
页数	文件大小	规格书
3页	885K
描述
Darlington Amplifier Transistor NPN Silicon

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中文翻译

获取价格

数据手册

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MMBTA13_15 数据手册

MMBTA13

MMBTA14

Darlington Amplifier Transistor NPN Silicon

Elektronische Bauelemente

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

Dim

Max

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

COLLECTOR 3

BASE1

EMITTER 2

FEATURES

Power dissipation

P_CM

Collector current

I_CM

0.3W（Tamb=25℃）

All Dimension in mm

0.3A

Collector-base voltage

V_(BR)CBO: 30V

Operating and storage junction temperature range

T_J，T_stg: -55℃ to +150

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cut-off current

Ic= 100μA， I_E=0

Ic= 100uA， I_B=0

I_E= 100μA， I_c=0

V_CB=30 V , I_E=0

0.1

μA

Emitter cut-off current

I_EBO

V_EB= 10V ,

I_C=0

_CE=5V, I_C= 10mA

MMBTA13

5000

h_FE(1)

MMBTA14 10000

MMBTA13 10000

MMBTA14 20000

DC current gain

V_CE=5V, I_C= 100mA

h_FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

V_{CE (sat)}

I_C=100 mA, I_B=0.1mA

V_CE=5V,I_C= 100mA

1.5

2.0

V_BE

V_CE=5V, I_C= 10mA

f=100MHz

Transition frequency

125

MHz

f_T

* Pulse Test : pulse width≤300μs，duty cycle≤2%。

Marking : MMBTA13:K2D；MMBTA14：K3D

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2004 Rev. B

Page 1 of 3

12 3

中文翻译

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