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MMBTA13_1

更新时间： 2024-01-09 14:55:22
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美台 - DIODES 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 112K
描述
NPN SURFACE MOUNT DARLINGTON TRANSISTOR

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中文翻译

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MMBTA13_1 数据手册

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SPICE MODELS: MMBTA13 MMBTA14  
MMBTA13 / MMBTA14  
NPN SURFACE MOUNT DARLINGTON TRANSISTOR  
Features  
•
•
Epitaxial Planar Die Construction  
Complementary PNP Types Available (MMBTA63  
/MMBTA64)  
Ideal for Medium Power Amplification and Switching  
High Current Gain  
Lead Free/RoHS Compliant (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
A
SOT-23  
C
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
•
•
•
•
B
C
TOP VIEW  
B
E
D
G
E
H
Mechanical Data  
K
G
H
J
M
•
•
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
J
L
•
•
•
•
K
L
C
M
α
Lead Free Plating (Matte Tin Finish annealed over Alloy  
42 leadframe).  
•
•
•
•
MMBTA13 Marking (See Page 3): K2D, K3D  
MMBTA14 Marking (See Page 3): K3D  
Ordering & Date Code Information: See Page 3  
Weight: 0.008 grams (approximate)  
All Dimensions in mm  
E
B
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current - Continuous  
Power Dissipation (Note 1)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
30  
30  
Unit  
V
V
10  
V
300  
300  
417  
mA  
mW  
°CW  
°C  
Pd  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
Rθ  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Emitter Breakdown Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
30  
⎯
⎯
V
nA  
nA  
V(BR)CEO  
ICBO  
IEBO  
⎯
100  
100  
IC = 100μA VBE = 0V  
VCB = 30V, IE = 0  
VEB = 10V, IC = 0  
ON CHARACTERISTICS (Note 2)  
IC  
IC  
=
=
10mA, VCE = 5.0V  
10mA, VCE = 5.0V  
DC Current Gain  
MMBTA13  
MMBTA14  
MMBTA13  
MMBTA14  
5,000  
10,000  
10,000  
20,000  
hFE  
⎯
⎯
IC = 100mA, VCE = 5.0V  
IC = 100mA, VCE = 5.0V  
IC = 100mA, IB = 100μA  
IC = 100mA, VCE = 5.0V  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Input Capacitance  
Current Gain-Bandwidth Product  
1.5  
2.0  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
8.0 Typical  
15 Typical  
125  
pF  
pF  
MHz  
Cobo  
Cibo  
fT  
VCB = 10V, f = 1.0MHz, IE = 0  
VEB = 0.5V, f = 1.0MHz, IC = 0  
VCE = 5.0V, IC = 10mA, f = 100MHz  
⎯
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
MMBTA13 / MMBTA14  
DS30047 Rev. 10 - 2  
1 of 3  
© Diodes Incorporated  
www.diodes.com  
123

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