Datasheet > MMBTA13

MMBTA13

更新时间： 2024-11-19 18:09:11

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	462K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBTA13 数据手册

MMBTA13

DARLINGTON TRANSISTOR (NPN)

FEATURES

 Complementary to MMBTA63

 High Current Gain

 Ideal for Medium Power Amplification and Switching

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

300

°C/W

°C

Collector Power Dissipation

300

R_θJA

Thermal Resistance From Junction To Ambient

Junction Temperature

417

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

Min

Typ Max Unit

Conditions

I_C=100μA，I_E=0

I =100μA I =0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

，

I_E=100μA，I_C=0

V_CB=30V, I_E=0

I_CBO

0.1

Emitter cut-off current

V_EB=10V, I_C=0

I_EBO

V_CE=5V, I_C=10mA

V_CE=5V, I_C=100mA

h_FE1

h_FE2

5000

DC current gain

10000

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

V_BE*

f_T

1.5

I_C=100mA，I_B=0.1mA

V_CE=5V, I_C=100mA

V_CE=5V,I_C=10mA,f=100

V_CB=10V, I_E=0, f=1

Transition frequency

125

MHz

Collector output capacitance

C_ob

MHz

*Pulse test: pulse width≤300μs,duty cycle≤2%.

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