Datasheet > MMBTA13

MMBTA13

更新时间： 2024-11-18 05:49:19

品牌	Logo	应用领域
DAYA		晶体晶体管光电二极管
页数	文件大小	规格书
3页	365K
描述
SOT-23 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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MMBTA13 数据手册

SOT-23 Plastic-Encapsulate Transistors

SOT-23

MMBTA13,14

TRANSISTOR (NPN)

Unit : mm

FEATURES

1. BASE

Darlington Amplifier

2. EMITTER

3. COLLECTOR

Marking : MMBTA13:K2D; MMBTA14:K3D

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance Junction to Ambient

Junction Temperature

0.3

P_C

350

℃/W

℃

R_θJA

T_J

417

150

T_stg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C= 100μA, I_E=0

I_C= 100uA, I_B=0

I_E= 100μA, I_C=0

V_CB=30 V , I_E=0

I_CBO

I_EBO

h_FE(1)

0.1

μA

Emitter cut-off current

V_EB= 10V ,

I_C=0

V_CE=5V, I_C= 10mA

MMBTA13

5000

MMBTA14 10000

MMBTA13 10000

MMBTA14 20000

DC current gain

V_CE=5V, I_C= 100mA

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_{CE (sat)}

V_{BE (sat)}

V_BE

f_T

I_C=100mA, I_B=0.1mA

V_CE=5V,I_C= 100mA

1.5

2.0

V_CE=5V, I_C= 10mA

f=100MHz

Transition frequency

125

MHz

Collector output capacitance

C_ob

V_CB=10V,I_E=0,f=1MHz

* Pulse Test : pulse width≤300μs,duty cycle≤2%.

12 3

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MMBTA13_NL	FAIRCHILD	获取价格	暂无描述
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