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MMBT5551L-B-AE3-B-R PDF预览

MMBT5551L-B-AE3-B-R

更新时间: 2024-11-18 04:39:27
品牌 Logo 应用领域
友顺 - UTC 晶体开关晶体管高压
页数 文件大小 规格书
4页 51K
描述
HIGH VOLTAGE SWITCHING TRANSISTOR

MMBT5551L-B-AE3-B-R 数据手册

 浏览型号MMBT5551L-B-AE3-B-R的Datasheet PDF文件第2页浏览型号MMBT5551L-B-AE3-B-R的Datasheet PDF文件第3页浏览型号MMBT5551L-B-AE3-B-R的Datasheet PDF文件第4页 
UNISONIC TECHNOLOGIES CO., LTD  
MMBT5551  
NPN EPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE SWITCHING  
TRANSISTOR  
FEATURES  
3
* High Collector-Emitter Voltage:  
VCEO=160V  
* High current gain  
1
2
SOT-23  
*Pb-free plating product number:MMBT5551L  
ORDERING INFORMATION  
Order Number  
Pin Assignment  
Package  
Packing  
Normal  
Lead Free Plating  
1
2
3
MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R SOT-23  
E
B
C
Tape Reel  
MMBT5551L-x-AE3-6-R  
(1)Packing Type  
(2)Pin Assignment  
(3)Package Type  
(4)Rank  
(1) R: Tape Reel  
(2) refer to Pin Assignment  
(3) AE3: SOT-23  
(4) x: refer to Classification of hFE  
(5) L: Lead Free Plating, Blank: Pb/Sn  
(5)Lead Plating  
MARKING  
G1  
www.unisonic.com.tw  
Copyright © 2005 Unisonic Technologies Co., Ltd  
1 of 4  
QW-R206-010,D  

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