MMBT489LT1
High Current Surface Mount
NPN Silicon Switching
Transistor for Load
Management in
Portable Applications
http://onsemi.com
30 VOLTS, 2.0 AMPERES
NPN TRANSISTOR
Features
• Pb−Free Package is Available
COLLECTOR
3
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Max
30
Unit
Vdc
Vdc
Vdc
A
1
V
CEO
V
CBO
V
EBO
BASE
50
2
5.0
1.0
2.0
EMITTER
Collector Current − Continuous
Collector Current − Peak
I
C
I
A
CM
3
THERMAL CHARACTERISTICS
Characteristic
SOT−23 (TO−236)
Symbol
Max
Unit
CASE 318
STYLE 6
1
Total Device Dissipation (Note 1)
P
D
2
@T = 25°C
310
2.5
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
403
°C/W
Total Device Dissipation (Note 2)
P
D
@T = 25°C
710
5.7
mW
mW/°C
A
Derate above 25°C
N3 M G
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
176
°C/W
G
1
Total Device Dissipation (Single Pulse < 10 s)
Junction and Storage Temperature Range
P
575
mW
Dsingle
T , T
J
−55 to +150
°C
stg
N3 = Specific Device Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
M
G
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 X 1.0 inch Pad
ORDERING INFORMATION
†
Device
Package
Shipping
MMBT489LT1
MMBT489LT1G
SOT−23
3000/Tape & Reel
3000/Tape & Reel
SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 4
MMBT489LT1/D