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MMBT495 PDF预览

MMBT495

更新时间: 2024-11-10 14:51:07
品牌 Logo 应用领域
先科 - SWST 晶体管
页数 文件大小 规格书
5页 756K
描述
小信号晶体管

MMBT495 数据手册

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MMBT495  
NPN Silicon Epitaxial Planar Transistor  
Features  
• Medium Power High Performance Transistor  
1. Base 2. Emitter 3. Collector  
SOT-23 Plastic Package  
Absolute Maximum Ratings (Ta = 25  
)
Parameter  
Symbol  
Value  
Unit  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
170  
150  
5
V
V
V
1
A
Peak Pulse Current  
Power Dissipation  
ICM  
2
A
Ptot  
Tj  
200  
150  
mW  
Junction Temperature  
Storage Temperature Range  
Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
625  
Unit  
/W  
Thermal Resistance from Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
®
1 / 5  
Dated: 01/08/2023 Rev: 03  

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