生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.8 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 4 pF |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 150 | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 0.35 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 40 MHz |
VCEsat-Max: | 0.3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBT5086/S62Z | TI |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | |
MMBT5086D87Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
MMBT5086S62Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | |
MMBT5087 | SAMSUNG |
获取价格 |
PNP (LOW NOISE TRANSISTOR) | |
MMBT5087 | FAIRCHILD |
获取价格 |
PNP General Purpose Amplifier | |
MMBT5087 | ONSEMI |
获取价格 |
Low Noise Transistor | |
MMBT5087 | SEMTECH |
获取价格 |
PNP Silicon Epitaxial Planar Transistor | |
MMBT5087/L99Z | TI |
获取价格 |
100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB | |
MMBT5087_NL | FAIRCHILD |
获取价格 |
暂无描述 | |
MMBT5087L | MOTOROLA |
获取价格 |
50mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-07, 3 PIN |