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MMBT5087 PDF预览

MMBT5087

更新时间: 2024-11-17 22:27:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 409K
描述
Low Noise Transistor

MMBT5087 数据手册

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Order this document  
by MMBT5087LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
COLLECTOR  
3
PNP Silicon  
Motorola Preferred Device  
1
BASE  
2
EMITTER  
3
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Symbol  
Value  
–50  
Unit  
Vdc  
1
2
V
CEO  
V
CBO  
V
EBO  
Collector–Base Voltage  
Emitter–Base Voltage  
–50  
Vdc  
CASE 31808, STYLE 6  
SOT23 (TO236AB)  
–3.0  
–50  
Vdc  
Collector Current — Continuous  
DEVICE MARKING  
I
C
mAdc  
MMBT5087LT1 = 2Q  
THERMAL CHARACTERISTICS  
Characteristic  
(1)  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board  
= 25°C  
Derate above 25°C  
P
D
225  
mW  
T
A
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
θJA  
P
D
(2)  
Alumina Substrate,  
T = 25°C  
A
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
θJA  
T , T  
55 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Collector–Emitter Breakdown Voltage  
V
V
–50  
–50  
Vdc  
Vdc  
(BR)CEO  
(I = –1.0 mAdc, I = 0)  
C
B
Collector–Base Breakdown Voltage  
(I = –100 µAdc, I = 0)  
(BR)CBO  
C
E
Collector Cutoff Current  
I
nAdc  
CBO  
(V  
CB  
(V  
CB  
= –10 Vdc, I = 0)  
–10  
–50  
E
= –35 Vdc, I = 0)  
E
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996

MMBT5087 替代型号

型号 品牌 替代类型 描述 数据表
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