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MMBT5086S62Z PDF预览

MMBT5086S62Z

更新时间: 2024-11-18 14:53:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
6页 60K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

MMBT5086S62Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.8其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

MMBT5086S62Z 数据手册

 浏览型号MMBT5086S62Z的Datasheet PDF文件第2页浏览型号MMBT5086S62Z的Datasheet PDF文件第3页浏览型号MMBT5086S62Z的Datasheet PDF文件第4页浏览型号MMBT5086S62Z的Datasheet PDF文件第5页浏览型号MMBT5086S62Z的Datasheet PDF文件第6页 
Discr ete P OWER & Sign a l  
Tech n ologies  
2N5086  
2N5087  
MMBT5086  
MMBT5087  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 2P / 2Q  
E
PNP General Purpose Amplifier  
This device is designed for low level, high gain, low noise general  
purpose amplifier applications at collector currents to 50 mA.  
Sourced from Process 62.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
50  
50  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
100  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5086  
*MMBT5086  
2N5086  
*MMBT5087  
PD  
Total Device Dissipation  
625  
5.0  
350  
2.8  
mW  
Derate above 25 C  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
°C/W  
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
ã 1997 Fairchild Semiconductor Corporation  

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