Datasheet > MMBT491A

MMBT491A

更新时间： 2024-01-13 08:32:56

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	209K
描述
NPN Silicon Epitaxial Planar Transistor

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数据手册

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MMBT491A 数据手册

MMBT491A

NPN Silicon Epitaxial Planar Transistor

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

Peak Pulse Current

I_CM

200

Power Dissipation

P_tot

T_J

Junction Temperature

Storage Temperature Range

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at V_CE= 5 V, I_C= 1 mA

at V_CE= 5 V, I_C= 500 mA

at V_CE= 5 V, I_C= 1 A

h_FE

300

200

900

Collector Base Cutoff Current

at V_CB= 30 V

I_CBO

I_CES

I_EBO

100

Collector Emitter Cutoff Current

at V_CE= 30 V

Emitter Base Cutoff Current

at V_EB= 4 V

Collector Emitter Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

at I_C= 1 A, I_B= 100 mA

V_CEsat

0.3

0.5

Base Emitter Saturation Voltage

at I_C= 1 A, I_B= 100 mA

Base Emitter Voltage

at I_C= 1 A, V_CE= 5 V

V_BEsat

V_BE

C_ob

f_T

1.2

1.1

Collector Output Capacitance

at V_CB= 10 V, f = 1 MHz

Gain Bandwidth Product

at V_CE= 10 V, I_C= 50 mA, f = 100 MHz

150

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 10/09/2008

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