Datasheet > MMBT493

MMBT493

更新时间： 2024-11-18 10:52:31

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	513K
描述
General Purpose Transistor

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中文翻译

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数据手册

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MMBT493 数据手册

MMBT493

NPN Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-23

FEATURES

Medium Power Transistor

Top View

C B

Collector

MARKING

493

Base

Millimeter

Min. Max.

0.10 REF.

0.55 REF.

REF.

Min.

Max.

3.00

2.55

1.40

1.15

2.80

2.25

1.20

0.90

Emitter

0.08

0.15

0.5 REF.

1.80

0.30

2.00

0.50

0.95 TYP.

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Unit

Parameter

Symbol

Ratings

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

120

Collector-Emitter Voltage

Emitter-Base Voltage

100

Collector Current -Continuous

Collector Power Dissipation

Junction & Storage temperature

P_D

250

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Parameter

Symbol Min.

Max.

Unit

Test Conditions

Collector-base Breakdown Voltage

Collector-emitter Breakdown Voltage

Emitter-base Breakdown Voltage

Collector Cut-off Current

V_(BR)CBO

120

I_C=100μA, I_E=0

V_(BR)CEO

V_(BR)EBO

I_CBO

100

I_C=10mA, I_B=0

I_E=100μA, I_C=0

0.1

μA

V_CB=100V, I_E=0

Collector Cut-off Current

I_CES

V_CE=100V, I_E=0

Emitter Cut-off Current

I_EBO

100

V_EB=4V, I_C=0

h_FE(1)

V_CE=10V, I_C=1mA

h_FE(2)

300

V_CE=10V, I_C=250mA

V_CE=10V, I_C=500mA

V_CE=10V, I_C=1000mA

I_C=500mA, I_B=50mA

I_C=1000mA, I_B=100mA

V_CE=10V, I_C=1000mA

V_CE= 10V, I_C= 50mA, f = 100MHz

V_CB= 10V, f = 1.0MHz, I_E= 0

DC Current Gain

h_FE(3)

h_FE(4)

V_CE(sat)

0.3

0.6

1.15

Collector-emitter Saturation Voltage

Base-emitter Saturation Voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

Transition Frequency

Output Capacitance

f _T

150

MHz

C_OB

*Pulse test: Pulse width ≦ 300μs, duty cycle ≦ 2%

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2002 Rev. A

Page 1 of 2

中文翻译

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