Datasheet > MMBT491

MMBT491

更新时间： 2024-11-18 10:52:31

品牌	Logo	应用领域
SECOS		晶体晶体管
页数	文件大小	规格书
2页	116K
描述
General Purpose Transistor

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中文翻译

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MMBT491 数据手册

MMBT491

NPN Silicon

General Purpose Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Low equivalent on-resistance

SOT-23

Min

Collector

Dim

Max

MARKING: 491

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Base

Emitter

Top View

All Dimension in mm

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Unit

Parameter

Symbol

Ratings

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction & Storage temperature

P_C

500

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS at Ta = 25°C

Parameter

Symbol Min.

Max.

Unit

Test Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=100μA,I_E=0

I_C=10mA,I_B=0

I_E=100μA,I_C=0

V_CB=60V, I_E=0

V_EB=4V, I_C=0

V_(BR)CEO

V_(BR)EBO

I_CBO

0.1

μA

Emitter cut-off current

I_EBO

h_FE(1)

100

V_CE=5V,I_C=1mA

h_FE(2)

300

V_CE=5V,I_C=500mA

V_CE=5V,I_C=1A

DC current gain

h_FE(3)

h_FE(4)

V_CE=5V,I_C=2A

V_CE(sat)1

0.25

0.5

1.1

I_C=500mA, I_B=50mA

I_C=1A, I_B=100mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)2

V_BE(sat)

I_C=1A, I_B=100mA

V_BE

I_C=1A, V_CE=5V

Transition frequency

Output Capacitance

f _T

150

MHz

V_CE= 10V, I_C= 50mA, f = 100MHz

V_CB= 10V, f = 1.0MHz, I_E= 0

C_OB

Note: 1. Measured under pulsed conditions, Pulse width = 300 μs, Duty cycle ≤ 2%.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

01-June-2002 Rev. A

Page 1 of 2

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