Datasheet > MMBT4403WT/R7

MMBT4403WT/R7

更新时间： 2024-02-13 08:01:57

品牌	Logo	应用领域
强茂 - PANJIT		晶体开关晶体管通用开关
页数	文件大小	规格书
4页	241K
描述
PNP GENERAL PURPOSE SWITCHING TRANSISTOR

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中文翻译

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数据手册

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MMBT4403WT/R7 数据手册

MMBT4403W

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

40V

POWER 200mW

FEATURES

PNP epitaxial silicon, planar design

Collector-emitter voltage V_CE= -40V

Collector current I_C=-600mA

Complimentary (NPN) device: MMBT4401W

MECHANICAL DATA

Case: SOT-323

Terminals: Solderable per MIL-STD-202, Method 208

Approx Weight: 0.02 grams

Marking: M3W

Top View

COLLECTOR

Collector

BASE

EMITTER

Base

Emitter

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector - Emitter Voltage

SYMBOL

V_CE0

VALUE

-40

UNIT

Collector - Base Voltage

V_CB0

-40

Emitter – Base Voltage

V_EB0

-5.0

Collector Current - Continuous

Max Power Dissipation (Note 1)

Junction and Storage Temperature Range

I_C

-600

℃

P_TOT

200

T_J, T_STG

-55 to 150

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

θJ A

℃/W

Thermal Resistance , Junction to Ambient (Note 1)

625

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad.

12 3 4

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