Datasheet > MMBT489

MMBT489

更新时间： 2024-11-19 17:00:55

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	458K
描述
30V,1A,Medium Power NPN Bipolar Transistor

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中文翻译

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数据手册

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MMBT489 数据手册

NPN SWITCHING TRANSISTOR

MMBT489

Features



Epitaxial planar die construction

Collector Current Capability I_CM=2A

Collector-emitter Voltage V_CEO=30V

Mechanical Data



Case: SOT-23



Molding compound, UL flammability classification rating

94V-0

SOT-23



Terminals: Matte tin plated leads, solderable per MIL-

STD-202, Method 208

Ordering Information

Part Number

Package

Shipping

Marking Code

MMBT489

SOT-23

3000 pcs / Tape & Reel

Maximum Ratings (@T_A=25℃ unless otherwise specified)

Symbol

Parameter

Value

Units

MAXIMUM RATINGS

Collector-Base Voltage

Collector-Emitter Voltage

V_CBO

V_CEO

V_EBO

I_C

Emitter-Base Voltage

Collector Current - Continuous

Collector Current − Peak

I_CM

Thermal Characteristic

Total Power Dissipation, T_a≤25℃

P_tot

T_J

310

150

℃

Junction Temperature

Junction and Storage Temperature

Thermal resistance from junction to ambient

T_j,T_stg

R_th（j-a）

-55 to +150

403

℃

℃/W

STM0021A: November 2018

www.gmesemi.com

12 3 4

中文翻译

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