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MMBFJ270 PDF预览

MMBFJ270

更新时间: 2024-11-26 11:57:07
品牌 Logo 应用领域
强茂 - PANJIT 晶体开关晶体管光电二极管
页数 文件大小 规格书
5页 198K
描述
P-CHANNEL SWITCH

MMBFJ270 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.16Is Samacsys:N
配置:SINGLEFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MMBFJ270 数据手册

 浏览型号MMBFJ270的Datasheet PDF文件第2页浏览型号MMBFJ270的Datasheet PDF文件第3页浏览型号MMBFJ270的Datasheet PDF文件第4页浏览型号MMBFJ270的Datasheet PDF文件第5页 
MMBFJ270  
P-CHANNEL SWITCH  
FEATURES  
• This device is designed for low level analog switching sample and  
hold circuits and chopper stabilized amplifiers  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICAL DATA  
• Case: SOT-23, Plastic  
Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 0.008gram  
Marking : 270  
3
G
D
1
S
2
ABSOLUTE MAXIMUM RATINGS T  
J
=25oC  
PARAMETER  
SYMBOL  
VALUE  
-30  
UNITS  
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
V
DG  
GS  
V
30  
50  
V
I
GF  
mA  
oC  
Operating and Storage Junction Temperature Range  
TJ,TSTG  
-55 to +150  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
VALUE  
UNITS  
225  
1.8  
mW  
mW/oC  
Total Device Dissipaton Derate above 25oC  
PD  
Thermal Resistance, Junciton to Ambient (Note 1)  
RJA  
556  
oC/W  
Note 1 : Device mounted on FR-4 PCB, 70 x 60 x 1mm.  
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE  
REV.0.3-SEP.18.2009  
PAGE . 1  

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