是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 0.68 | 配置: | SINGLE |
最小漏源击穿电压: | 25 V | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 2.5 pF | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JEDEC-95代码: | TO-236 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.225 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMBFJ309LT1 | ONSEMI |
类似代替 |
JFET VHF/UHF Amplifier Transistor | |
PMBFJ110,215 | NXP |
功能相似 |
N-channel FET TO-236 3-Pin | |
PMBFJ108,215 | NXP |
功能相似 |
N-channel FET TO-236 3-Pin |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBFJ309LT1G_09 | ONSEMI |
获取价格 |
JFET - VHF/UHF Amplifier Transistor | |
MMBFJ309LT3 | MOTOROLA |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB | |
MMBFJ309S62Z | TI |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET, TO-236AB | |
MMBFJ310 | PANJIT |
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J-FET HIGH FREQUENCY AMPLIFIER TRANSISTOR | |
MMBFJ310 | FAIRCHILD |
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SFET RF,VHF, UHF, Amplitiers | |
MMBFJ310 | TI |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB | |
MMBFJ310 | ONSEMI |
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N 沟道 RF 晶体管 | |
MMBFJ310_10 | FAIRCHILD |
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N-Channel RF Amplifier | |
MMBFJ310_NL | FAIRCHILD |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
MMBFJ310D87Z | FAIRCHILD |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |