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MMBFJ309LT1G PDF预览

MMBFJ309LT1G

更新时间: 2024-11-26 03:36:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器晶体管
页数 文件大小 规格书
5页 64K
描述
JFET - VHF/UHF Amplifier Transistor N-Channel

MMBFJ309LT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.68配置:SINGLE
最小漏源击穿电压:25 VFET 技术:JUNCTION
最大反馈电容 (Crss):2.5 pF最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MMBFJ309LT1G 数据手册

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MMBFJ309LT1,  
MMBFJ310LT1  
JFET − VHF/UHF Amplifier  
Transistor  
N−Channel  
http://onsemi.com  
Features  
2 SOURCE  
Pb−Free Packages are Available  
3
MAXIMUM RATINGS  
GATE  
Rating  
Drain−Source Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
V
DS  
GS  
1 DRAIN  
Gate−Source Voltage  
Gate Current  
V
25  
Vdc  
I
10  
mAdc  
G
3
THERMAL CHARACTERISTICS  
Characteristic  
SOT−23 (TO−236)  
CASE 318  
Symbol  
Max  
Unit  
1
STYLE 10  
2
Total Device Dissipation FR−5 Board,  
P
D
(Note 1) T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
556  
°C/W  
°C  
q
JA  
MARKING DIAGRAM  
T , T  
J
−55 to +150  
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
6x M G  
G
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
1
6x = Device Code  
x = U for MMBFJ309LT1  
x = T for MMBFJ310LT1  
= Date Code*  
M
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBFJ309LT1  
SOT−23 3,000 / Tape & Reel  
MMBFJ309LT1G SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
MMBFJ310LT1  
SOT−23 3,000 / Tape & Reel  
MMBFJ310LT1G SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 3  
MMBFJ309LT1/D  
 

MMBFJ309LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBFJ309LT1 ONSEMI

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