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MMBFU310LT1G PDF预览

MMBFU310LT1G

更新时间: 2024-11-26 03:38:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 94K
描述
JFET Transistor N-Channel

MMBFU310LT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.68配置:SINGLE
最小漏源击穿电压:25 VFET 技术:JUNCTION
最大反馈电容 (Crss):2.5 pF最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MMBFU310LT1G 数据手册

 浏览型号MMBFU310LT1G的Datasheet PDF文件第2页浏览型号MMBFU310LT1G的Datasheet PDF文件第3页浏览型号MMBFU310LT1G的Datasheet PDF文件第4页 
MMBFU310LT1  
Preferred Device  
JFET Transistor  
N−Channel  
Features  
Pb−Free Package is Available  
http://onsemi.com  
2 SOURCE  
MAXIMUM RATINGS  
3
Rating  
Drain−Source Voltage  
Gate−Source Voltage  
Gate Current  
Symbol  
Value  
25  
Unit  
Vdc  
GATE  
V
DS  
V
GS  
25  
Vdc  
1 DRAIN  
I
G
10  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
3
SOT−23 (TO−236AB)  
CASE 318−08  
STYLE 10  
THERMAL CHARACTERISTICS  
1
Total Device Dissipation FR5 Board  
(Note 1)  
T = 25°C  
A
P
D
225  
1.8  
mW  
2
mW/°C  
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
°C/W  
°C  
q
JA  
MARKING DIAGRAM  
Junction and Storage Temperature  
T , T  
J
55 to +150  
stg  
1. FR5 = 1.0 0.75 0.062 in.  
6C M  
1
6C  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBFU310LT1  
MMBFU310LT1G  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 3  
MMBFU310LT1/D  
 

MMBFU310LT1G 替代型号

型号 品牌 替代类型 描述 数据表
MMBFJ310LT3G ONSEMI

完全替代

N 沟道 JFET 晶体管
MMBFJ310LT1G ONSEMI

类似代替

JFET - VHF/UHF Amplifier Transistor N-Channel
MMBFJ310LT1 ONSEMI

类似代替

JFET VHF/UHF Amplifier Transistor

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