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MMBR4957LT1 PDF预览

MMBR4957LT1

更新时间: 2024-11-25 22:51:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
4页 70K
描述
PNP Silicon High-Frequency Transistor

MMBR4957LT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.91其他特性:LOW NOISE
最大集电极电流 (IC):0.03 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):20
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):1200 MHz
Base Number Matches:1

MMBR4957LT1 数据手册

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Order this document  
by MMBR4957LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
. . . designed for high–gain, low–noise amplifier oscillator and mixer applica-  
tions. Specifically packaged for thick and thin–film circuits using surface mount  
components.  
High Gain — G = 17 dB Typ @ f = 450 MHz  
pe  
Low Noise — NF = 3.0 dB Typ @ f = 450 MHz  
I
= 30 mA  
C
HIGH–FREQUENCY  
TRANSISTOR  
Available in tape and reel packaging options by adding suffix:  
T1 suffix = 3,000 units per reel  
PNP SILICON  
T3 suffix = 10,000 units per reel  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
30  
30  
3.0  
30  
150  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
°C  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
Maximum Junction Temperature  
V
CEO  
V
CBO  
V
EBO  
I
C
T
Jmax  
Power Dissipation, T  
Derate linearly above T  
case  
= 75°C*  
= 75°C @  
P
0.278  
3.70  
W
mW/°C  
case  
D(max)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
55 to +150  
270  
Unit  
°C  
Storage Temperature  
T
stg  
Thermal Resistance Junction to Case*  
R
°C/W  
θJC  
CASE 318–07, STYLE 6  
SOT–23  
* Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.  
DEVICE MARKING  
LOW PROFILE  
(TO–236AA/AB)  
MMBR4957LT1, T3 = 7F  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = –1.0 mAdc, I = 0)  
V
V
V
30  
30  
3.0  
Vdc  
Vdc  
C
B
(BR)CEO  
(BR)CBO  
(BR)EBO  
Collector–Base Breakdown Voltage (I = –100 µAdc, I = 0)  
C
E
Emitter–Base Breakdown Voltage (I = –100 µAdc, I = 0)  
Vdc  
E
C
Collector Cutoff Current (V  
CB  
= –10 Vdc, I = 0)  
I
0.1  
µAdc  
C
CBO  
ON CHARACTERISTICS  
DC Current Gain (I = 2.0 mAdc, V  
CE  
= –10 Vdc)  
h
FE  
20  
150  
C
SMALL–SIGNAL CHARACTERISTICS  
Current–Gain — Bandwidth Product  
f
1200  
0.8  
MHz  
pF  
T
(I = 2.0 mAdc, V  
E CE  
= –10 Vdc, f = 100 MHz)  
Collector–Base Capacitance  
(V = –10 Vdc, I = 0, f = 1.0 MHz)  
C
G
cb  
pe  
CB  
Common–Emitter Amplifier Power Gain  
(V = –10 Vdc, I = 2.0 mAdc, f = 450 MHz)  
E
17  
dB  
CE  
C
Noise Figure (I = 2.0 mAdc, V  
= –10 Vdc, f = 450 MHz)  
CE  
NF  
3.0  
dB  
C
REV 6  
Motorola, Inc. 1994  

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