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MMBR571LT1 PDF预览

MMBR571LT1

更新时间: 2024-02-21 22:53:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
16页 216K
描述
NPN Silicon High-Frequency Transistors

MMBR571LT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.75其他特性:LOW NOISE
最大集电极电流 (IC):0.08 A基于收集器的最大容量:1 pF
集电极-发射极最大电压:10 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:ULTRA HIGH FREQUENCY BAND
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:0.33 W
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

MMBR571LT1 数据手册

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Order this document  
by MMBR571LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed for low noise, wide dynamic range front–end amplifiers and  
low–noise VCO’s. Available in a surface–mountable plastic packages. This  
Motorola series of small–signal plastic transistors offers superior quality and  
performance at low cost.  
I
= 80 mA  
C
High Gain–Bandwidth Product  
= 8.0 GHz (Typ) @ 50 mA  
Low Noise Figure  
LOW NOISE  
HIGH–FREQUENCY  
TRANSISTORS  
f
T
NF = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)  
min  
High Gain  
= 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)  
G
NF  
High Power Gain  
G
= 13.5 dB (Typ) (MRF5711LT1)  
pe (matched)  
State–of–the–Art Technology  
Fine Line Geometry  
CASE 318–08, STYLE 6  
SOT–23  
Ion–Implanted Arsenic Emitters  
Gold Top Metallization and Wires  
Silicon Nitride Passivation  
Available in tape and reel packaging options:  
T1 suffix = 3,000 units per reel  
LOW PROFILE  
MMBR571LT1  
CASE 317–01, STYLE 2  
MACRO–X  
MAXIMUM RATINGS  
MRF571  
Rating  
Symbol  
Value  
10  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
20  
3.0  
80  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T  
case  
= 75°C  
P
D(max)  
MMBR571LT1, MRF5711LT1  
Derate linearly above T = 75°C @  
0.33  
4.44  
W
mW/°C  
case  
CASE 318A–05, STYLE 1  
SOT–143  
Total Device Dissipation (1) @ T = 75°C  
Derate above 75°C  
P
0.58  
7.73  
Watts  
mW/°C  
C
D
MRF571  
LOW PROFILE  
MRF5711LT1  
Operating and Storage Temperature  
T
stg  
55 to  
+150  
°C  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
MRF5711LT1, MMBR571LT1  
R
225  
°C/W  
θJC  
Thermal Resistance, Junction to Case  
Maximum Junction Temperature  
DEVICE MARKING  
MRF571  
R
130  
150  
°C/W  
°C  
θJC  
T
Jmax  
MMBR571LT1 = 7X  
NOTE:  
1. Case temperature measured on collector lead immediately adjacent to body of package.  
MRF5711LT1 = 02  
REV 8  
Motorola, Inc. 1997  

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