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MMBR911LT1

更新时间： 2024-01-28 14:28:18

品牌	Logo	应用领域
ADPOW		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
6页	148K
描述
NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR

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技术参数
数据手册

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MMBR911LT1 技术参数

生命周期：	Active	包装说明：	,
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.58	Base Number Matches：	1

MMBR911LT1 数据手册

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

MMBR911LT1

NPN SILICON

LOW NOISE, HIGH-FREQUENCY TRANSISTOR

MMBR911LT1G

* G Denotes RoHS Compliant, Pb Free Terminal Finish

DESCRIPTION:

Designed for low noise, wide dynamic range front–end amplifiers and

low–noise VCO’s. Available in a surface–mountable plastic package. This

small–signal plastic transistor offers superior quality and performance

at low cost.

FEATURES:

High Gain–Bandwidth Product

fT = 7.0 GHz (Typ) @ 30 mA

Low Noise Figure

NF = 1.7 dB (Typ) @ 500 MHz

High Gain

GNF = 17 dB (Typ) @ 10 mA/500 MHz

State–of–the–Art Technology

Fine Line Geometry

Ion–Implanted Arsenic Emitters

Gold Top Metallization and Wires

Silicon Nitride Passivation

Available in tape and reel packaging options:

T1 suffix = 3,000 units per reel

MAXIMUM RATINGS

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Value

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

2.0

P_D(max)

Power Dissipation @ T_case= 75°C (1)

Derate linearly above T_case= 75°C

333

4.44

mW/°C

T_STG

Storage Temperature

-55 to +150

150

ºC

T_Jmax

Maximum Junction Temperature

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

Rev A 9/2005

12 3 4 5 6

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