Datasheet > MMBR901MLT1

MMBR901MLT1

更新时间： 2024-11-26 19:58:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
1页	339K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMBR901MLT1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.58
最大集电极电流 (IC)：	0.03 A	配置：	Single
最小直流电流增益 (hFE)：	30	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.375 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

MMBR901MLT1 数据手册

MMBR901MLT1/MRF9011MLT1

RF & MICROWAVE TRANSISTORS

R F P R O D U C T S D I V I S I O N

DESCRIPTION

KEY FEATURES

High FTau-3.8GHz

The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete

silicon bipolar transistors housed in low cost plastic packages.

Low noise-1.8dB@1GHz

Low cost SOT23/SOT143

package

IMPORTANT:

For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

APPLICATIONS/BENEFITS

ABSOLUTE MAXIMUM RATINGS (T_CASE= 25

Symbol

V_CBO

V_CEO

V_EBO

I_C

P_DISS

T_J

T_STG

ꢀ

Parameter

ꢀ

Value

2.0

375

150

Unit

LNA, Oscillator

, Pre-Driver

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

Power Dissipation

Junction Temperature

Storage Temperature

-55 to +150

SOT-143

MRF9011MLT1

SOT-23

MMBR901MLT1

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance

250

C/W

STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)

Symbol

Test

Conditions

Units

Min.

Typ.

Max.

BV_CBO

BV_CEO

I_CBO

_C= .1mA

_C=1.0mA

_E= 0

_B= 0

200

_E= 0

_CB= 15V

_CE= 5 V

h_FE

_C= 5 mA

DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)

Symbol

Test

Conditions

Units

Min.

Typ.

Max.

C_CB

FTau

NFmin

_CB= 10 V

= 1.0 MHz

0.55

3.8

1.8

13.5

V_CE= 10 V

I_C= 15 mA

I_C= 5 mA

= 1.0 GHz

GHz

_CE= 6 V

CXXXX.PDF 2000-11-06

Microsemi

Page 1 of 1

RF Products Division

140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855

中文翻译

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