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MMBR941_99 PDF预览

MMBR941_99

更新时间: 2024-11-26 04:14:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
14页 270K
描述
NPN Silicon Low Noise, High-Frequency Transistors

MMBR941_99 数据手册

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Order this document  
by MMBR941LT1/D  
Freescale Semiconductor, Inc.  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed for use in high gain, low noise small–signal amplifiers. This series  
features excellent broadband linearity and is offered in a variety of packages.  
Fully Implanted Base and Emitter Structure  
9 Finger, 1.25 Micron Geometry with Gold Top Metal  
Gold Sintered Back Metal  
I
= 50 mA  
C
Available in tape and reel packaging options:  
T1 suffix = 3,000 units per reel  
T3 suffix = 10,000 units per reel  
LOW NOISE  
HIGH–FREQUENCY  
TRANSISTORS  
CASE 318–08, STYLE 6  
SOT–23  
LOW PROFILE  
MMBR941LT1, T3, MMBR941BLT1  
CASE 419–02, STYLE 3  
MRF947AT1, MRF947BT1,  
MRF947T1, T3  
REV 10  
Motorola, Inc. 1999  
For More Information On This Product,  
Go to: www.freescale.com  

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