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MMBR941LT1 PDF预览

MMBR941LT1

更新时间: 2024-11-20 22:10:03
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号双极晶体管射频小信号双极晶体管
页数 文件大小 规格书
17页 313K
描述
NPN Silicon Low Noise, High-Frequency Transistors

MMBR941LT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.34
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:10 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:L BAND
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:0.25 W
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):8000 MHzBase Number Matches:1

MMBR941LT1 数据手册

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Order this document  
by MMBR941LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed for use in high gain, low noise small–signal amplifiers. This series  
features excellent broadband linearity and is offered in a variety of packages.  
Fully Implanted Base and Emitter Structure  
9 Finger, 1.25 Micron Geometry with Gold Top Metal  
Gold Sintered Back Metal  
I
= 50 mA  
C
Available in tape and reel packaging options:  
T1 suffix = 3,000 units per reel  
T3 suffix = 10,000 units per reel  
LOW NOISE  
HIGH–FREQUENCY  
TRANSISTORS  
CASE 318–08, STYLE 6  
SOT–23  
LOW PROFILE  
MMBR941LT1, T3, MMBR941BLT1  
CASE 419–02, STYLE 3  
MRF947AT1, MRF947BT1,  
MRF947T1, T3  
CASE 318A–05, STYLE 1  
SOT–143  
LOW PROFILE  
MRF9411LT1  
REV 9  
Motorola, Inc. 1997  

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