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MMBR951LT1 PDF预览

MMBR951LT1

更新时间: 2024-11-20 22:39:39
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
16页 219K
描述
NPN Silicon Low Noise, High-Frequency Transistors

MMBR951LT1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.85
其他特性:LOW NOISE最大集电极电流 (IC):0.1 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):50
最高频带:L BANDJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:0.322 W认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):8000 MHz
Base Number Matches:1

MMBR951LT1 数据手册

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Order this document  
by MMBR951ALT1/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed for use in high gain, low noise small–signal amplifiers. This series  
features excellent broadband linearity and is offered in a variety of packages.  
Fully Implanted Base and Emitter Structure  
18 Finger, 1.25 Micron Geometry with Gold Top Metal  
Gold Sintered Back Metal  
I
= 100 mA  
C
LOW NOISE  
HIGH–FREQUENCY  
TRANSISTORS  
Available in tape and reel packaging options:  
T1 suffix = 3,000 units per reel  
CASE 318–08, STYLE 6  
SOT–23  
LOW PROFILE  
MMBR951LT1, MMBR951ALT1  
CASE 419–02, STYLE 3  
MRF957T1  
CASE 318A–05, STYLE 1  
SOT–143  
LOW PROFILE  
MRF9511LT1  
REV 9  
Motorola, Inc. 1997  

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