5秒后页面跳转
MMBFU310L PDF预览

MMBFU310L

更新时间: 2024-01-29 17:38:54
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管光电二极管放大器
页数 文件大小 规格书
6页 165K
描述
JFET Transistor

MMBFU310L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.65Is Samacsys:N
FET 技术:JUNCTION最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.225 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

MMBFU310L 数据手册

 浏览型号MMBFU310L的Datasheet PDF文件第2页浏览型号MMBFU310L的Datasheet PDF文件第3页浏览型号MMBFU310L的Datasheet PDF文件第4页浏览型号MMBFU310L的Datasheet PDF文件第5页浏览型号MMBFU310L的Datasheet PDF文件第6页 
Order this document  
by MMBFU310LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
N–Channel  
2 SOURCE  
Motorola Preferred Device  
3
GATE  
1 DRAIN  
3
MAXIMUM RATINGS  
1
Rating  
Drain–Source Voltage  
Symbol  
Value  
Unit  
Vdc  
2
V
V
25  
25  
10  
DS  
Gate–Source Voltage  
Vdc  
CASE 31808, STYLE 10  
SOT23 (TO236AB)  
GS  
Gate Current  
I
G
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
P
225  
mW  
D
T
A
= 25°C  
Derate above 25°C  
1.8  
556  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
T , T  
J stg  
55 to +150  
MMBFU310LT1 = 6C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Gate–Source Breakdown Voltage (I = –1.0 µAdc, V  
= 0)  
V
(BR)GSS  
25  
Vdc  
pA  
G
DS  
Gate 1 Leakage Current (V  
Gate 2 Leakage Current (V  
= –15 Vdc, V  
= –15 Vdc, V  
= 0)  
I
I
150  
150  
6.0  
GS  
GS  
DS  
DS  
G1SS  
G2SS  
= 0, T = 125°C)  
nAdc  
Vdc  
A
Gate Source Cutoff Voltage (V  
= 10 Vdc, I = 1.0 nAdc)  
V
GS(off)  
2.5  
DS  
D
ON CHARACTERISTICS  
Zero–Gate–Voltage Drain Current (V  
= 10 Vdc, V  
= 0)  
I
24  
60  
mAdc  
Vdc  
DS  
GS  
DSS  
Gate–Source Forward Voltage (I = 10 mAdc, V  
G
= 0)  
V
1.0  
DS  
GS(f)  
SMALL–SIGNAL CHARACTERISTICS  
Forward Transfer Admittance  
|Y  
|
10  
18  
250  
5.0  
2.5  
mmhos  
µmhos  
pF  
fs  
(V  
DS  
= 10 Vdc, I = 10 mAdc, f = 1.0 kHz)  
D
Output Admittance  
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)  
|y  
C
|
os  
DS  
Input Capacitance  
(V = –10 Vdc, V  
D
iss  
= 0 Vdc, f = 1.0 MHz)  
DS  
GS  
Reverse Transfer Capacitance  
(V = –10 Vdc, V = 0 Vdc, f = 1.0 MHz)  
C
pF  
rss  
GS  
1. FR5 = 1.0  
DS  
0.75 0.062 in.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1996  

与MMBFU310L相关器件

型号 品牌 获取价格 描述 数据表
MMBFU310LT1 ONSEMI

获取价格

JFET Transistor
MMBFU310LT1 MOTOROLA

获取价格

JFET Transistor
MMBFU310LT1_05 ONSEMI

获取价格

JFET Transistor N-Channel
MMBFU310LT1G ONSEMI

获取价格

JFET Transistor N-Channel
MMBFU310LT3 ONSEMI

获取价格

Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, PLASTIC, CASE 318-08, 3 PIN
MMBL4148H WEITRON

获取价格

Surface Mount Switching Diode
MMBL4148H-G WEITRON

获取价格

暂无描述
MMBL4448H WEITRON

获取价格

Surface Mount Switching Diode
MMBL914H WEITRON

获取价格

Surface Mount Switching Diode
MMBL914H-G WEITRON

获取价格

Rectifier Diode, 1 Element, 100V V(RRM),