Datasheet > MMBFU310L

MMBFU310L

更新时间： 2024-11-25 22:32:11

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管光电二极管放大器
页数	文件大小	规格书
6页	165K
描述
JFET Transistor

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MMBFU310L 数据手册

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by MMBFU310LT1/D

SEMICONDUCTOR TECHNICAL DATA

N–Channel

2 SOURCE

Motorola Preferred Device

GATE

1 DRAIN

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Symbol

Value

Unit

Vdc

Gate–Source Voltage

Vdc

CASE 318–08, STYLE 10

SOT–23 (TO–236AB)

Gate Current

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBFU310LT1 = 6C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage (I = –1.0 µAdc, V

= 0)

(BR)GSS

–25

—

Vdc

Gate 1 Leakage Current (V

Gate 2 Leakage Current (V

= –15 Vdc, V

= 0)

–150

–6.0

G1SS

G2SS

= 0, T = 125°C)

—

nAdc

Vdc

Gate Source Cutoff Voltage (V

= 10 Vdc, I = 1.0 nAdc)

GS(off)

–2.5

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current (V

= 10 Vdc, V

= 0)

—

mAdc

Vdc

DSS

Gate–Source Forward Voltage (I = 10 mAdc, V

= 0)

1.0

GS(f)

SMALL–SIGNAL CHARACTERISTICS

Forward Transfer Admittance

—

250

5.0

2.5

mmhos

µmhos

= 10 Vdc, I = 10 mAdc, f = 1.0 kHz)

Output Admittance

(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)

Input Capacitance

(V = –10 Vdc, V

iss

= 0 Vdc, f = 1.0 MHz)

Reverse Transfer Capacitance

(V = –10 Vdc, V = 0 Vdc, f = 1.0 MHz)

rss

1. FR–5 = 1.0

0.75 0.062 in.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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