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MMBFU310LT1_05 PDF预览

MMBFU310LT1_05

更新时间: 2024-11-26 03:38:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 94K
描述
JFET Transistor N-Channel

MMBFU310LT1_05 数据手册

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MMBFU310LT1  
Preferred Device  
JFET Transistor  
N−Channel  
Features  
Pb−Free Package is Available  
http://onsemi.com  
2 SOURCE  
MAXIMUM RATINGS  
3
Rating  
Drain−Source Voltage  
Gate−Source Voltage  
Gate Current  
Symbol  
Value  
25  
Unit  
Vdc  
GATE  
V
DS  
V
GS  
25  
Vdc  
1 DRAIN  
I
G
10  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
3
SOT−23 (TO−236AB)  
CASE 318−08  
STYLE 10  
THERMAL CHARACTERISTICS  
1
Total Device Dissipation FR5 Board  
(Note 1)  
T = 25°C  
A
P
D
225  
1.8  
mW  
2
mW/°C  
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
556  
°C/W  
°C  
q
JA  
MARKING DIAGRAM  
Junction and Storage Temperature  
T , T  
J
55 to +150  
stg  
1. FR5 = 1.0 0.75 0.062 in.  
6C M  
1
6C  
M
G
= Specific Device Code  
= Date Code  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBFU310LT1  
MMBFU310LT1G  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 3  
MMBFU310LT1/D  
 

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