Datasheet > MMBFU310LT1_05

MMBFU310LT1_05

更新时间： 2024-09-28 03:38:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	94K
描述
JFET Transistor N-Channel

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中文翻译

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数据手册

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MMBFU310LT1_05 数据手册

MMBFU310LT1

Preferred Device

JFET Transistor

N−Channel

Features

• Pb−Free Package is Available

http://onsemi.com

2 SOURCE

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Gate−Source Voltage

Gate Current

Symbol

Value

Unit

Vdc

GATE

Vdc

1 DRAIN

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

SOT−23 (TO−236AB)

CASE 318−08

STYLE 10

THERMAL CHARACTERISTICS

Total Device Dissipation FR−5 Board

(Note 1)

T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

°C

MARKING DIAGRAM

Junction and Storage Temperature

T , T

−55 to +150

stg

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

6C M

= Specific Device Code

= Date Code

= Pb−Free Package

ORDERING INFORMATION

†

Device

Package

Shipping

MMBFU310LT1

MMBFU310LT1G

SOT−23

3000 Tape & Reel

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

April, 2005 − Rev. 3

MMBFU310LT1/D

12 3 4

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