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MMBFJ310_10 PDF预览

MMBFJ310_10

更新时间: 2024-09-28 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 射频放大器
页数 文件大小 规格书
6页 213K
描述
N-Channel RF Amplifier

MMBFJ310_10 数据手册

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December 2010  
J309 / J310 / MMBFJ309 / MMBFJ310  
N-Channel RF Amplifier  
Features  
• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.  
• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.  
• Sourced from Process 92.  
• Source & Drain are interchangeable.  
MMBFJ309  
MMBFJ310  
J309  
J310  
G
S
SOT-23  
G
TO-92  
Mark MMBFJ309 : 6U  
MMBFJ310 : 6T  
S
D
D
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted  
Symbol  
VDS  
Parameter  
Value  
Units  
V
Drain-Source Voltage  
Gate-Source Voltage  
Forward Gate Current  
25  
-25  
VGS  
V
IGF  
10  
mA  
°C  
TJ, Tstg  
Operating and Storage Junction Temperature Range  
- 55 to +150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle  
operations.  
Thermal Characteristics Ta = 25°C unless otherwise noted  
Max.  
Symbol  
Parameter  
Total Device Dissipation  
Units  
J309-J310 *MMBFJ309-310  
625  
5.0  
350  
2.8  
mW  
mW/°C  
PD  
Derate above 25°C  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
127  
357  
°C/W  
°C/W  
556  
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".  
© 2010 Fairchild Semiconductor Corporation  
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1  
www.fairchildsemi.com  
1

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