Datasheet > MMBFJ309LT1G_09

MMBFJ309LT1G_09

更新时间： 2024-09-28 05:49:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
5页	141K
描述
JFET - VHF/UHF Amplifier Transistor

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数据手册

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MMBFJ309LT1G_09 数据手册

MMBFJ309LT1G,

MMBFJ310LT1G

JFET - VHF/UHF Amplifier

Transistor

N−Channel

http://onsemi.com

Features

2 SOURCE

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

GATE

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

1 DRAIN

Gate−Source Voltage

Vdc

Gate Current

mAdc

SOT−23 (TO−236)

CASE 318

THERMAL CHARACTERISTICS

STYLE 10

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

MARKING DIAGRAM

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

556

°C/W

°C

T , T

−55 to +150

stg

6x M G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

6x = Device Code

x = U for MMBFJ309LT1

x = T for MMBFJ310LT1

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBFJ309LT1G

SOT−23 3,000 / Tape & Reel

(Pb−Free)

MMBFJ310LT1G

SOT−23 3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 4

MMBFJ309LT1/D

12 3 4 5

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