Datasheet > MMBFJ309LT1_06

MMBFJ309LT1_06

更新时间： 2024-11-28 03:36:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
5页	64K
描述
JFET - VHF/UHF Amplifier Transistor N-Channel

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中文翻译

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数据手册

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MMBFJ309LT1_06 数据手册

MMBFJ309LT1,

MMBFJ310LT1

JFET − VHF/UHF Amplifier

Transistor

N−Channel

http://onsemi.com

Features

2 SOURCE

• Pb−Free Packages are Available

MAXIMUM RATINGS

GATE

Rating

Drain−Source Voltage

Symbol

Value

Unit

Vdc

1 DRAIN

Gate−Source Voltage

Gate Current

Vdc

mAdc

THERMAL CHARACTERISTICS

Characteristic

SOT−23 (TO−236)

CASE 318

Symbol

Max

Unit

STYLE 10

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

556

°C/W

°C

MARKING DIAGRAM

T , T

−55 to +150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

6x M G

1. FR−5 = 1.0 x 0.75 x 0.062 in.

6x = Device Code

x = U for MMBFJ309LT1

x = T for MMBFJ310LT1

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBFJ309LT1

SOT−23 3,000 / Tape & Reel

MMBFJ309LT1G SOT−23 3,000 / Tape & Reel

(Pb−Free)

MMBFJ310LT1

SOT−23 3,000 / Tape & Reel

MMBFJ310LT1G SOT−23 3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 3

MMBFJ309LT1/D

12 3 4 5

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