是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | unknown |
风险等级: | 5.78 | 配置: | SINGLE |
最小漏源击穿电压: | 25 V | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 2.5 pF | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JEDEC-95代码: | TO-236AB | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | DEPLETION MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 0.225 W | 最大功率耗散 (Abs): | 0.35 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MMBFU310LT1G | ONSEMI |
类似代替 ![]() |
JFET Transistor N-Channel |
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MMBFJ310LT1G | ONSEMI |
类似代替 ![]() |
JFET - VHF/UHF Amplifier Transistor N-Channel |
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MMBFJ309LT1G | ONSEMI |
类似代替 ![]() |
JFET - VHF/UHF Amplifier Transistor N-Channel |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBFJ309_10 | FAIRCHILD |
获取价格 |
N-Channel RF Amplifier |
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MMBFJ309D87Z | FAIRCHILD |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |
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MMBFJ309-HIGH | TI |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AA |
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MMBFJ309L | MOTOROLA |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB, CASE 318-07, 3 PIN |
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MMBFJ309L99Z | TI |
获取价格 |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, FET, TO-236AB |
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MMBFJ309LT1 | ONSEMI |
获取价格 |
JFET VHF/UHF Amplifier Transistor |
![]() |
MMBFJ309LT1 | MOTOROLA |
获取价格 |
JFET VHF/UHF Amplifier Transistor |
![]() |
MMBFJ309LT1_06 | ONSEMI |
获取价格 |
JFET - VHF/UHF Amplifier Transistor N-Channel |
![]() |
MMBFJ309LT1G | ONSEMI |
获取价格 |
JFET - VHF/UHF Amplifier Transistor N-Channel |
![]() |
MMBFJ309LT1G_09 | ONSEMI |
获取价格 |
JFET - VHF/UHF Amplifier Transistor |
![]() |