Datasheet > MMBFJ309_10

MMBFJ309_10

更新时间： 2024-11-26 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		射频放大器
页数	文件大小	规格书
6页	213K
描述
N-Channel RF Amplifier

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MMBFJ309_10 数据手册

December 2010

J309 / J310 / MMBFJ309 / MMBFJ310

N-Channel RF Amplifier

Features

• This device is designed for VHF/UHF amplifier, oscillator and mixer applications.

• As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.

• Sourced from Process 92.

• Source & Drain are interchangeable.

MMBFJ309

MMBFJ310

J309

J310

SOT-23

TO-92

Mark MMBFJ309 : 6U

MMBFJ310 : 6T

Absolute Maximum Ratings * T_a= 25°C unless otherwise noted

Symbol

V_DS

Parameter

Value

Units

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

-25

V_GS

I_GF

°C

T_J,T_stg

Operating and Storage Junction Temperature Range

- 55 to +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics T_a= 25°C unless otherwise noted

Max.

Symbol

Parameter

Total Device Dissipation

Units

J309-J310 *MMBFJ309-310

625

5.0

350

2.8

mW/°C

P_D

Derate above 25°C

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

127

357

°C/W

556

* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".

J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1

www.fairchildsemi.com

12 3 4 5 6

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