Datasheet > MMBFJ305_11

MMBFJ305_11

更新时间： 2024-09-30 11:59:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		射频放大器
页数	文件大小	规格书
3页	126K
描述
N-Channel RF Amplifier

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MMBFJ305_11 数据手册

July 2011

MMBFJ305

N-Channel RF Amplifier

SOT-23

Features

• This device is designed primarily for electronic switching

applications such as low On Resistance analog switching.

• Sourced from process 50.

Marking : 6Q

Note : Drain & Source are interchangeable.

Absolute Maximum Ratings* T_A= 25°C unless otherwise noted

Symbol

V_DG

Parameter

Value

-30

Units

Drain-Gate Voltage

V_GS

Gate-Source Voltage

Forward Gate Current

I_GF

°C

T_J,T_STGOperating and Storage Junction Temperature Range

-55 to +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle

operations.

Thermal Characteristics* T_A= 25°C unless otherwise noted

Symbol

Parameter

Total Device Dissipation

Derate above 25°C

Value

225

1.8

Units

mW/°C

P_D

R_θJA

Thermal Resistance, Junction to Ambient

556

°C/W

* Device mounted on FR-4 PCB 1.6” x 1.6” x 0.06”.

Electrical Characteristics T_A=25°C unless otherwise noted

Symbol

Parameter

Conditions

Min.

Max.

Units

Off Characteristics

V_(BR)GSSGate-Source Breakdown Voltage I_G= -1.0μA, V_DS= 0

-30

-0.5

1.0

I_GSS

Gate Reverse Current

V_GS= -20V, V_DS= 0

V_DS= 15V, I_D= 1.0nA

-100

-3.0

V_GS(off)

Gate-Source Cutoff Voltage

On Characteristics

I_DSSZero-Gate Voltage Drain Current* V_DS= 15V, V_GS= 0

Small Signal Characteristics

8.0

gfs

Forward Transfer Conductance

Output Conductance

V_DS= 15V, V_GS= 0, f = 1.0kHz

3000

μmhos

g_OSS

* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%

MMBFJ305 Rev. A0

www.fairchildsemi.com

12 3

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